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RCHIVE INFORMATION
MRF21030LR3 MRF21030LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
?
Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power ? 3.5 Watts
Power Gain ? 14 dB
Efficiency ? 15%
?
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
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High Gain, High Efficiency and High Linearity
?
Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Low Gold Plating Thickness on Leads, 40μ″
Nominal.
?
RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
83.3
0.48
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
2.1
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF21030
Rev. 12, 5/2006
Freescale Semiconductor
Technical Data
MRF21030LR3
MRF21030LSR3
2200 MHz, 30 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21030LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21030LSR3
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Freescale Semiconductor, Inc., 2006, 2008.
All rights reserved.
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